Growth and photoluminescence studies of a-plane AlN/AlxGa1−xN quantum wells
نویسنده
چکیده
Both a-plane and c-plane AlN/Al0.65Ga0.35N quantum wells QWs have been grown by metal organic chemical vapor deposition and their photoluminescence PL emission properties were studied and compared. It was found that the low temperature PL characteristics of a-plane QWs are primarily governed by the quantum size effect, whereas those of c-plane QWs are significantly affected by the polarization fields. The PL decay time was found to be only weakly dependent on the well width Lw for a-plane QWs, whereas a strong dependence of the PL decay time on Lw was observed for c-plane QWs. Moreover, Lw dependence studies also revealed that structures with Lw 2 nm and Lw 2 nm provide highest emission efficiency in a-plane and c-plane AlN/Al0.65Ga0.35N QWs, respectively. © 2007 American Institute of Physics. DOI: 10.1063/1.2743956
منابع مشابه
Growth and optical properties of a-plane AlN and Al rich AlN/AlxGa1-xN quantum wells grown on r-plane sapphire substrates
p s s current topics in solid state physics
متن کاملAlGaN/AlN multiple quantumwells grown by MOVPE on AlN templates using nitrogen as a carrier gas
AlxGa1 xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and materi...
متن کاملRecent Advances in III-Nitride Ultraviolet Photonic Materials and Devices
This paper summarizes some of the recent advances made on III-nitride ultraviolet photonics materials and devices. In particular, the growth and characterization of AlGaN alloys are discussed in detail. It was shown that AlGaN could be made n-type for x up to 1 (pure AlN). Time-resolved photoluminescence (PL) studies carried out on these materials have shown that Si-doping reduces the effect of...
متن کاملAbsorption Spectroscopy and Band Structure in Polarized GaN/AlxGa1 xN Quantum Wells
The absorption properties in hetero-polarization GaN/AlxGa1 xN (x 1⁄4 0:06) quantum well structures are studied in reflection, photoreflection, and photoluminescence excitation spectroscopy and compared with the results of band structure calculations. Above the energy of the main luminescence transitions we observe three distinct absorption thresholds. From Franz-Keldysh oscillations in the abs...
متن کاملIntersubband absorption properties of high Al content AlxGa1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
High Al content AlxGa1-xN/GaN multiple quantum well (MQW) films with different interlayers were grown by metal organic chemical vapor deposition. These MQWs were designed to achieve intersubband (ISB) absorption in the mid-infrared spectral range. We have considered two growth conditions, with AlGaN interlayer and GaN/AlN superlattice (SL) interlayer, both deposited on GaN-on-sapphire templates...
متن کامل